Because ion implantation causes damage to the crystal structure of the target which is often unwanted, ion implantation processing is often followed by a thermal annealing. This can be referred to as damage recovery. The amount of crystallographic damage can be enough to completely amorphize the surface of the target: i. In some cases, complete amorphization of a target is preferable to a highly defective crystal: An amorphized film can be regrown at a lower temperature than required to anneal a highly damaged crystal.
Amorphisation of the substrate can occur as a result of the beam damage.
Download Product Flyer
Some of the collision events result in atoms being ejected sputtered from the surface, and thus ion implantation will slowly etch away a surface. The effect is only appreciable for very large doses. If there is a crystallographic structure to the target, and especially in semiconductor substrates where the crystal structure is more open, particular crystallographic directions offer much lower stopping than other directions.